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MUR490E, MUR4100E
MUR4100E is a Preferred Device
SWITCHMODEt Power Rectifiers
Ultrafast "E'' Series with High Reverse Energy Capability
These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes.
Features http://onsemi.com
* 20 mJ Avalanche Energy Guaranteed * Excellent Protection Against Voltage Transients in Switching * * * * * * *
Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V These are Pb-Free Devices
ULTRAFAST RECTIFIERS 4.0 AMPS, 900 - 1000 VOLTS
AXIAL LEAD CASE 267-05 STYLE 1
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 1.1 Gram (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MARKING DIAGRAM
A MUR 4xxxE YYWW G G A = Assembly Location MUR4xxxE = Device Code xxx = 90 or 100 YY = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
* Lead and Mounting Surface Temperature for Soldering Purposes: *
220C Max for 10 Seconds, 1/16 from Case Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR490E MUR4100E Average Rectified Forward Current (Sq. Wave) (Mounting Method #3 Per Note 1) Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Operating Junction Storage Temperature Symbol VRRM VRWM VR IF(AV) IFSM Value Unit V 900 1000 4.0 @ TA = 35C 70 A A
ORDERING INFORMATION
Device MUR490E Package Axial Lead* Axial Lead* Axial Lead* Axial Lead* Axial Lead* Shipping 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 1,500/Tape & Reel 1,500/Tape & Reel
TJ, Tstg
-65 to +175
C
MUR4100E MUR4100EG
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max See Note 1 Unit C/W
MUR4100ERL MUR4100ERLG
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb-Free.
Preferred devices are recommended choices for future use and best overall value.
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February, 2006 - Rev. 3
Publication Order Number: MUR490E/D
MUR490E, MUR4100E
ELECTRICAL CHARACTERISTICS
Characteristics Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TJ = 150C) (iF = 3.0 Amps, TJ = 25C) (iF = 4.0 Amps, TJ = 25C) Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TJ = 100C) (Rated dc Voltage, TJ = 25C) Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/ms) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V) Controlled Avalanche Energy (See Test Circuit in Figure 6) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. Symbol vF 1.53 1.75 1.85 iR 900 25 trr 100 75 tfr WAVAL 75 20 ns mJ ns mA Value Unit V
20 IR, REVERSE CURRENT (m A)
TJ = 175C 10 100C 7.0 5.0 i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
25C
3.0 2.0
1000 400 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.001
TJ = 175C 100C
25C
*The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR.
0
100
200
300
400
500
600
700
800
900 1000
1.0 0.7 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 0.5 0.3 0.2
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
10 Rated VR RqJA = 28C/W
8.0
6.0
0.1 0.07 0.05
4.0 SQUARE WAVE
dc
2.0 0 0
0.03 0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.8 2
50
100
150
200 2
TA, AMBIENT TEMPERATURE (C)
Figure 1. Typical Forward Voltage
Figure 3. Current Derating (Mounting Method #3 Per Note 1)
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MUR490E, MUR4100E
PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) SQUAREWAVE (Capacitive IPK =20 IAV Load) 10 dc TJ = 175C 5.0 C, CAPACITANCE (pF) 70 60 50 40 TJ = 25C 30 20
10 9.0 8.0 7.0 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
+VDD IL 40 mH COIL BVDUT VD MERCURY SWITCH S1 ID ID IL DUT VDD t0 t1 t2 t
Figure 6. Test Circuit
Figure 7. Current-Voltage Waveforms
The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new "E'' series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new "E'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.
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MUR490E, MUR4100E
EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV -V DUT DD
CH1 CH2 500V 50mV A 20ms 953 V VERT CHANNEL 2: IL 0.5 AMPS/DIV.
EQUATION (2): 2 W [ 1 LI LPK AVAL 2
CHANNEL 1: VDUT 500 VOLTS/DIV.
TIME BASE: 20 ms/DIV. 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF
Figure 8. Current-Voltage Waveforms
NOTE 1 -- AMBIENT MOUNTING DATA
Data shown for thermal resistance junction-to-ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 RqJA 3 Lead Length, L (IN) 1/8 1/4 1/2 3/4 50 51 53 55 58 59 61 63 28 Units C/W C/W C/W
MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small.
L L
MOUNTING METHOD 2 Vector Push-In Terminals T-28
L
L
MOUNTING METHOD 3
P.C. Board with 1-1/2 x 1-1/2 Copper Surface
L = 1/2
Board Ground Plane
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MUR490E, MUR4100E
PACKAGE DIMENSIONS
AXIAL LEAD CASE 267-05 ISSUE G
K D
1
A
2
NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 ---
B
K
DIM A B D K
STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE
SWITCHMODE registered trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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MUR490E/D

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